IRFR3411

IRFR3411TRPBF vs IRFR3411 vs IRFR3411PBF

 
PartNumberIRFR3411TRPBFIRFR3411IRFR3411PBF
DescriptionMOSFET MOSFT 100V 32A 44mOhm 48nCMOSFET N-CHANNEL 100V 32A DPAK, PKMOSFET N-CH 100V 32A DPAK
ManufacturerInfineonIRIR
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current32 A--
Rds On Drain Source Resistance44 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge71 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation130 W--
ConfigurationSingle-Single
PackagingReel-Tube
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel-1 N-Channel
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min21 S--
Fall Time35 ns-35 ns
Product TypeMOSFET--
Rise Time35 ns-35 ns
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time39 ns-39 ns
Typical Turn On Delay Time11 ns-11 ns
Part # AliasesSP001564934--
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--130 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--32 A
Vds Drain Source Breakdown Voltage--100 V
Rds On Drain Source Resistance--44 mOhms
Qg Gate Charge--48 nC
Channel Mode--Enhancement
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IRFR3411TRPBF MOSFET MOSFT 100V 32A 44mOhm 48nC
IRFR3411PBF MOSFET N-CH 100V 32A DPAK
IRFR3411TRPBF MOSFET N-CH 100V 32A DPAK
IRFR3411 MOSFET N-CHANNEL 100V 32A DPAK, PK
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