IRFR3704ZT

IRFR3704ZTRLPBF vs IRFR3704ZTRPBF vs IRFR3704ZTRL

 
PartNumberIRFR3704ZTRLPBFIRFR3704ZTRPBFIRFR3704ZTRL
DescriptionMOSFET MOSFT 20V 60A 8.4mOhm 9.3nCMOSFET 20V 1 N-CH HEXFET 8.4mOhms 9.3nCMOSFET N-CH 20V 60A DPAK
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current60 A60 A-
Rds On Drain Source Resistance8.4 mOhms9.2 mOhms-
Vgs th Gate Source Threshold Voltage2.55 V2.1 V-
Qg Gate Charge14 nC9.3 nC-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation48 W48 W-
ConfigurationSingleSingle-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon / IRInfineon / IR-
Forward Transconductance Min41 S41 S-
Fall Time12 ns12 ns-
Product TypeMOSFETMOSFET-
Rise Time8.9 ns8.9 ns-
Factory Pack Quantity30002000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001567428SP001552150-
Unit Weight0.139332 oz0.139332 oz-
Vgs Gate Source Voltage-20 V-
Minimum Operating Temperature-- 55 C-
Channel Mode-Enhancement-
Typical Turn Off Delay Time-4.9 ns-
Typical Turn On Delay Time-41 ns-
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRFR3704ZTRLPBF MOSFET MOSFT 20V 60A 8.4mOhm 9.3nC
IRFR3704ZTRRPBF MOSFET 20V 1 N-CH HEXFET 8.4mOhms 9.3nC
IRFR3704ZTRPBF MOSFET 20V 1 N-CH HEXFET 8.4mOhms 9.3nC
Infineon Technologies
Infineon Technologies
IRFR3704ZTRL MOSFET N-CH 20V 60A DPAK
IRFR3704ZTRLPBF MOSFET N-CH 20V 60A DPAK
IRFR3704ZTRRPBF MOSFET N-CH 20V 60A DPAK
IRFR3704ZTRPBF MOSFET N-CH 20V 60A DPAK
IRFR3704ZTR Neu und Original
IRFR3704ZTRPBF. Neu und Original
Top