IRFR3711TRP

IRFR3711TRPBF vs IRFR3711TRPBF-CUT TAPE vs IRFR3711TRPBF.

 
PartNumberIRFR3711TRPBFIRFR3711TRPBF-CUT TAPEIRFR3711TRPBF.
DescriptionMOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current110 A--
Rds On Drain Source Resistance8.5 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge29 nC--
Pd Power Dissipation120 W--
ConfigurationSingle--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Part # AliasesSP001557028--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IRFR3711TRPBF MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC
IRFR3711TRPBF RF Bipolar Transistors MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC
IRFR3711TRPBF-CUT TAPE Neu und Original
IRFR3711TRPBF. Neu und Original
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