 | |  | |
| PartNumber | IRFS38N20DTR | IRFS38N20DTRL | IRFS38N20DTRLP |
| Description | MOSFET Transistor, N-Channel, TO-263AB | MOSFET N-CH 200V 43A D2PAK | |
| Manufacturer | IR | IR | IR |
| Product Category | FETs - Single | FETs - Single | FETs - Single |
| Packaging | Reel | Reel | Reel |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Technology | Si | Si | Si |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Configuration | Single | Single | Single |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Pd Power Dissipation | 320 W | 320 W | 320 W |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Fall Time | 47 ns | 47 ns | 47 ns |
| Rise Time | 95 ns | 95 ns | 95 ns |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 44 A | 44 A | 44 A |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | 200 V |
| Rds On Drain Source Resistance | 54 mOhms | 54 mOhms | 54 mOhms |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Typical Turn Off Delay Time | 29 ns | 29 ns | 29 ns |
| Typical Turn On Delay Time | 16 ns | 16 ns | 16 ns |
| Qg Gate Charge | 60 nC | 60 nC | 60 nC |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
IRFS38N20DTRRP | MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC | |
Infineon Technologies |
IRFS38N20DTRRP | MOSFET N-CH 200V 43A D2PAK | |
| IRFS38N20DTRLP | MOSFET N-CH 200V 43A D2PAK | ||
| IRFS38N20DTRLP-CUT TAPE | Neu und Original | ||
| IRFS38N20DTR | Neu und Original | ||
| IRFS38N20DTRL | MOSFET Transistor, N-Channel, TO-263AB | ||
| IRFS38N20DTRLPBF | Neu und Original |