IRFU3706

IRFU3706PBF vs IRFU3706 vs IRFU3706-701PBF

 
PartNumberIRFU3706PBFIRFU3706IRFU3706-701PBF
DescriptionMOSFET 20V 1 N-CH HEXFET 9mOhms 23nCMOSFET N-CH 20V 75A I-PAKMOSFET N-CH 20V 75A IPAK
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current75 A--
Rds On Drain Source Resistance11 mOhms--
Vgs Gate Source Voltage12 V--
Qg Gate Charge23 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation88 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height6.22 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
TypeSmps MOSFET--
Width2.38 mm--
BrandInfineon / IR--
Fall Time4.8 ns--
Product TypeMOSFET--
Rise Time87 ns--
Factory Pack Quantity6525--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17 ns--
Typical Turn On Delay Time6.8 ns--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRFU3706PBF MOSFET 20V 1 N-CH HEXFET 9mOhms 23nC
Infineon Technologies
Infineon Technologies
IRFU3706 MOSFET N-CH 20V 75A I-PAK
IRFU3706PBF MOSFET N-CH 20V 75A I-PAK
IRFU3706-701PBF MOSFET N-CH 20V 75A IPAK
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