 |  | | |
| PartNumber | IRFW630BTM-FP001 | IRFW630BTM | IRFW630BTM(FP001) |
| Description | MOSFET 200V N-Ch B-FET | - Bulk (Alt: IRFW630BTM) | |
| Manufacturer | ON Semiconductor | FAI | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 9 A | - | - |
| Rds On Drain Source Resistance | 400 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.13 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | IRFW630B | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 65 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 70 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 60 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Part # Aliases | IRFW630BTM_FP001 | - | - |
| Unit Weight | 0.046296 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
IRFW630BTM-FP001 | MOSFET 200V N-Ch B-FET | |
| IRFW630BTM | - Bulk (Alt: IRFW630BTM) | ||
| IRFW630BTM_FP001 | Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFW630BTM-FP001) | ||
| IRFW630BTM(FP001) | Neu und Original | ||
ON Semiconductor |
IRFW630BTM-FP001 | MOSFET N-CH 200V 9A D2PAK |