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| PartNumber | IRFW630BTM-FP001 |
| Description | MOSFET 200V N-Ch B-FET |
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS | E |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | TO-263-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V |
| Id Continuous Drain Current | 9 A |
| Rds On Drain Source Resistance | 400 mOhms |
| Vgs Gate Source Voltage | 30 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd Power Dissipation | 3.13 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Packaging | Reel |
| Height | 4.83 mm |
| Length | 10.67 mm |
| Series | IRFW630B |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Width | 9.65 mm |
| Brand | ON Semiconductor / Fairchild |
| Fall Time | 65 ns |
| Product Type | MOSFET |
| Rise Time | 70 ns |
| Factory Pack Quantity | 800 |
| Subcategory | MOSFETs |
| Typical Turn Off Delay Time | 60 ns |
| Typical Turn On Delay Time | 11 ns |
| Part # Aliases | IRFW630BTM_FP001 |
| Unit Weight | 0.046296 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
IRFW630BTM-FP001 | MOSFET 200V N-Ch B-FET | |
ON Semiconductor |
IRFW630BTM-FP001 | MOSFET N-CH 200V 9A D2PAK |