IRG4BC20SD

IRG4BC20SD-SPBF vs IRG4BC20SD vs IRG4BC20SD-S

 
PartNumberIRG4BC20SD-SPBFIRG4BC20SDIRG4BC20SD-S
DescriptionIGBT 600V 19A 60W D2PAKIGBT 600V 19A 60W TO220ABIGBT 600V 19A 60W D2PAK
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Product CategoryIGBTs - SingleIGBTs - SingleIGBTs - Single
Series---
PackagingTubeTubeTube
Unit Weight0.009185 oz--
Mounting StyleSMD/SMT--
Package CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263ABTO-220-3TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input TypeStandardStandardStandard
Mounting TypeSurface MountThrough HoleSurface Mount
Supplier Device PackageD2PAKTO-220ABD2PAK
ConfigurationSingle--
Power Max60W60W60W
Reverse Recovery Time trr37ns37ns37ns
Current Collector Ic Max19A19A19A
Voltage Collector Emitter Breakdown Max600V600V600V
IGBT Type---
Current Collector Pulsed Icm38A38A38A
Vce on Max Vge Ic1.6V @ 15V, 10A1.6V @ 15V, 10A1.6V @ 15V, 10A
Switching Energy320μJ (on), 2.58mJ (off)320μJ (on), 2.58mJ (off)320μJ (on), 2.58mJ (off)
Gate Charge27nC27nC27nC
Td on off 25°C62ns/690ns62ns/690ns62ns/690ns
Test Condition480V, 10A, 50 Ohm, 15V480V, 10A, 50 Ohm, 15V480V, 10A, 50 Ohm, 15V
Pd Power Dissipation60 W--
Minimum Operating Temperature- 55 C--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.4 V--
Continuous Collector Current at 25 C19 A--
Maximum Gate Emitter Voltage+/- 20 V--
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRG4BC20SDPBF IGBT Transistors 600V DC-1kHz
Infineon Technologies
Infineon Technologies
IRG4BC20SD-SPBF IGBT 600V 19A 60W D2PAK
IRG4BC20SDPBF IGBT Transistors 600V DC-1kHz
IRG4BC20SD IGBT 600V 19A 60W TO220AB
IRG4BC20SD-S IGBT 600V 19A 60W D2PAK
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