IRG4BC30K-S

IRG4BC30K-SPBF vs IRG4BC30K-STRLP vs IRG4BC30K-S

 
PartNumberIRG4BC30K-SPBFIRG4BC30K-STRLPIRG4BC30K-S
DescriptionIGBT Transistors 600V ULTRAFAST 8-25KHZ DSCRETE IGBTIGBT Modules 600V 23AIGBT 600V 28A 100W D2PAK
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryIGBT TransistorsIGBT ModulesIC Chips
RoHSYY-
TechnologySi--
Package / CaseDPAK-3D-PAK-3-
Mounting StyleSMD/SMTSMD/SMT-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage2.7 V--
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C28 A28 A-
Pd Power Dissipation100 W--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingTubeReelTube
Continuous Collector Current Ic Max28 A--
Height4.83 mm4.83 mm-
Length10.67 mm10.67 mm-
Width9.65 mm9.65 mm-
BrandInfineon / IRInfineon / IR-
Product TypeIGBT TransistorsIGBT Modules-
Factory Pack Quantity50800-
SubcategoryIGBTsIGBTs-
Part # AliasesSP001545772SP001541356-
Unit Weight0.009185 oz0.009185 oz-
Series---
Package Case--TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D2PAK
Power Max--100W
Reverse Recovery Time trr---
Current Collector Ic Max--28A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--58A
Vce on Max Vge Ic--2.7V @ 15V, 16A
Switching Energy--360μJ (on), 510μJ (off)
Gate Charge--67nC
Td on off 25°C--26ns/130ns
Test Condition--480V, 16A, 23 Ohm, 15V
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRG4BC30K-SPBF IGBT Transistors 600V ULTRAFAST 8-25KHZ DSCRETE IGBT
IRG4BC30K-STRLP IGBT Modules 600V 23A
IRG4BC30K-STRRP IGBT Modules 600V ULTRAFAST 8-25KHZ DSCRETE IGBT
Infineon Technologies
Infineon Technologies
IRG4BC30K-STRRP IGBT 600V 28A 100W D2PAK
IRG4BC30K-STRLP IGBT 600V 28A 100W D2PAK
IRG4BC30K-S IGBT 600V 28A 100W D2PAK
IRG4BC30K-SPBF IGBT 600V 28A 100W D2PAK
IRG4BC30K-S. Neu und Original
IRG4BC30K-STRR Neu und Original
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