IRG4BC30W-S

IRG4BC30W-SPBF vs IRG4BC30W-STRL vs IRG4BC30W-S

 
PartNumberIRG4BC30W-SPBFIRG4BC30W-STRLIRG4BC30W-S
DescriptionIGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBTIGBT 600V 23A 100W D2PAKIGBT 600V 23A 100W D2PAK
ManufacturerInfineon-Infineon Technologies
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseDPAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.1 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C23 A--
Pd Power Dissipation100 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube-Tube
Continuous Collector Current Ic Max23 A--
Height4.83 mm--
Length10.67 mm--
Width9.65 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Part # AliasesSP001533534--
Unit Weight0.009185 oz--
Series---
Package Case--TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D2PAK
Power Max--100W
Reverse Recovery Time trr---
Current Collector Ic Max--23A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--92A
Vce on Max Vge Ic--2.7V @ 15V, 12A
Switching Energy--130μJ (on), 130μJ (off)
Gate Charge--51nC
Td on off 25°C--25ns/99ns
Test Condition--480V, 12A, 23 Ohm, 15V
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRG4BC30W-STRLP IGBT Modules 600V 23AD2PAK
Infineon Technologies
Infineon Technologies
IRG4BC30W-SPBF IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT
IRG4BC30W-STRL IGBT 600V 23A 100W D2PAK
IRG4BC30W-STRLP IGBT Modules 600V 23AD2PAK
IRG4BC30W-STRRP IGBT Modules 600V WARP 60-150 KHZ DISCRETE IGBT
IRG4BC30W-SPBF IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT
IRG4BC30W-S IGBT 600V 23A 100W D2PAK
Infineon Technologies
Infineon Technologies
IRG4BC30W-STRRP IGBT Modules 600V WARP 60-150 KHZ DISCRETE IGBT
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