 |  |  | |
| PartNumber | IRG4PF50WDPBF | IRG4PF50WD-201P | IRG4PF50WD |
| Description | IGBT Transistors 900V Warp 20-100kHz | IGBT 900V 51A 200W TO247AC | |
| Manufacturer | Infineon | - | IR |
| Product Category | IGBT Transistors | - | IGBTs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 900 V | - | - |
| Collector Emitter Saturation Voltage | 2.25 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 51 A | - | - |
| Pd Power Dissipation | 200 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 51 A | - | - |
| Height | 20.7 mm | - | - |
| Length | 15.87 mm | - | - |
| Width | 5.31 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 400 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | SP001547862 | - | - |
| Unit Weight | 1.340411 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IRG4PF50WDPBF | IGBT Transistors 900V Warp 20-100kHz | |
| IRG4PF50WD-201P | IGBT 900V 51A 200W TO247AC | ||
| IRG4PF50WDPBF | IGBT Transistors 900V Warp 20-100kHz | ||
| IRG4PF50WD | Neu und Original | ||
| IRG4PF50WDPBF,G4PF50WD,I | Neu und Original | ||
| IRG4PF50WDPBF,IRG4PF50WD | Neu und Original | ||
| IRG4PF50WDPBF-T | Neu und Original | ||
| IRG4PF50WDPBF. | Neu und Original |