IRG4PSC71KD

IRG4PSC71KDPBF vs IRG4PSC71KD G4PSC71KD vs IRG4PSC71KD

 
PartNumberIRG4PSC71KDPBFIRG4PSC71KD G4PSC71KDIRG4PSC71KD
DescriptionIGBT Transistors 600V UltraFast 8-25kHzIGBT 600V 85A 350W SUPER247
ManufacturerInfineon-
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-274-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.83 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C85 A--
Pd Power Dissipation350 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube-Bulk
Continuous Collector Current Ic Max85 A--
Height20.3 mm--
Length15.6 mm--
Width5 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity25--
SubcategoryIGBTs--
Part # AliasesSP001544764--
Unit Weight0.211644 oz--
Series---
Package Case--TO-274AA
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--SUPER-247 (TO-274AA)
Power Max--350W
Reverse Recovery Time trr--82ns
Current Collector Ic Max--85A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--200A
Vce on Max Vge Ic--2.3V @ 15V, 60A
Switching Energy--3.95mJ (on), 2.33mJ (off)
Gate Charge--340nC
Td on off 25°C--82ns/282ns
Test Condition--480V, 60A, 5 Ohm, 15V
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IRG4PSC71KDPBF IGBT Transistors 600V UltraFast 8-25kHz
IRG4PSC71KDPBF IGBT Transistors 600V UltraFast 8-25kHz
IRG4PSC71KD IGBT 600V 85A 350W SUPER247
IRG4PSC71KD G4PSC71KD Neu und Original
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