IRG7PSH7

IRG7PSH73K10PBF vs IRG7PSH73K10 vs IRG7PSH73K10PBF.

 
PartNumberIRG7PSH73K10PBFIRG7PSH73K10IRG7PSH73K10PBF.
DescriptionIGBT Transistors 1200V 220A SUPER-247
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-274-3--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage2 V2 V-
Maximum Gate Emitter Voltage30 V+/- 30 V-
Continuous Collector Current at 25 C220 A220 A-
Pd Power Dissipation1.15 kW--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingTubeTube-
Continuous Collector Current Ic Max220 A220 A-
Height20.8 mm--
Length16.1 mm--
Width5.5 mm--
BrandInfineon / IR--
Gate Emitter Leakage Current400 nA400 nA-
Product TypeIGBT Transistors--
Factory Pack Quantity25--
SubcategoryIGBTs--
Part # AliasesSP001549408--
Unit Weight0.211644 oz--
Series---
Package Case-TO-274AA-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-SUPER-247 (TO-274AA)-
Power Max-1150W-
Reverse Recovery Time trr---
Current Collector Ic Max-220A-
Voltage Collector Emitter Breakdown Max-1200V-
IGBT Type-Trench-
Current Collector Pulsed Icm-225A-
Vce on Max Vge Ic-2.3V @ 15V, 75A-
Switching Energy-7.7mJ (on), 4.6mJ (off)-
Gate Charge-360nC-
Td on off 25°C-63ns/267ns-
Test Condition-600V, 75A, 4.7 Ohm, 15V-
Pd Power Dissipation-1.15 kW-
Collector Emitter Voltage VCEO Max-1.2 kV-
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRG7PSH73K10PBF IGBT Transistors 1200V 220A SUPER-247
Infineon Technologies
Infineon Technologies
IRG7PSH73K10PBF IGBT Transistors 1200V 220A SUPER-247
IRG7PSH73K10 Neu und Original
IRG7PSH73K10PBF. Neu und Original
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