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| PartNumber | IRGB4B60KPBF |
| Description | IGBT Transistors 600V Low VCEon |
| Manufacturer | Infineon |
| Product Category | IGBT Transistors |
| RoHS | Y |
| Technology | Si |
| Package / Case | TO-220-3 |
| Mounting Style | Through Hole |
| Configuration | Single |
| Collector Emitter Voltage VCEO Max | 600 V |
| Collector Emitter Saturation Voltage | 2.1 V |
| Maximum Gate Emitter Voltage | 20 V |
| Continuous Collector Current at 25 C | 12 A |
| Pd Power Dissipation | 63 W |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Series | RC |
| Packaging | Tube |
| Height | 9.02 mm |
| Length | 10.67 mm |
| Width | 4.83 mm |
| Brand | Infineon / IR |
| Gate Emitter Leakage Current | 100 nA |
| Product Type | IGBT Transistors |
| Factory Pack Quantity | 1000 |
| Subcategory | IGBTs |
| Tradename | TRENCHSTOP |
| Part # Aliases | SP001546064 |
| Unit Weight | 0.211644 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IRGB4B60KPBF | IGBT Transistors 600V Low VCEon |