PartNumber | IRGP4069DPBF | IRGP4069D-EPBF | IRGP4069-EPBF |
Description | IGBT Transistors 600V 76A | IGBT Transistors 600V Low VCEon Trench IGBT | IGBT Transistors IGBT DISCRETES |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-247-3 | TO-247AD-3 | TO-247-3 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 600 V | 600 V | 600 V |
Collector Emitter Saturation Voltage | 1.85 V | 1.85 V | 1.85 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Continuous Collector Current at 25 C | 76 A | 76 A | 76 A |
Pd Power Dissipation | 268 W | 268 W | 268 W |
Minimum Operating Temperature | - 55 C | - | - |
Packaging | Tube | Tube | Tube |
Height | 20.7 mm | 20.7 mm | - |
Length | 15.87 mm | 15.87 mm | - |
Width | 5.31 mm | 5.31 mm | - |
Brand | Infineon Technologies | Infineon Technologies | Infineon / IR |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 400 | 400 | 25 |
Subcategory | IGBTs | IGBTs | IGBTs |
Part # Aliases | SP001535800 | SP001534110 | SP001545038 |
Unit Weight | 1.340411 oz | 1.340411 oz | 1.340411 oz |
Gate Emitter Leakage Current | - | 100 nA | - |