IRGP479

IRGP4790DPBF vs IRGP4790D-EPBF vs IRGP4790-EPBF

 
PartNumberIRGP4790DPBFIRGP4790D-EPBFIRGP4790-EPBF
DescriptionIGBT Transistors 650V UltraFast IGBT TO-247IGBT Transistors IGBT DISCRETESIGBT 650V TO-247
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseTO-247AD-3TO-247AD-3-
Mounting StyleThrough HoleThrough Hole-
SeriesTRENCHSTOPTRENCHSTOP-
PackagingTubeTubeTube
Height20.7 mm20.7 mm-
Length15.87 mm15.87 mm-
Width5.31 mm5.31 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity25400-
SubcategoryIGBTsIGBTs-
TradenameTRENCHSTOPTRENCHSTOP-
Part # AliasesSP001542350SP001542360-
Unit Weight0.015027 oz0.035274 oz-
Configuration-Single-
Collector Emitter Voltage VCEO Max-650 V-
Collector Emitter Saturation Voltage-1.7 V-
Maximum Gate Emitter Voltage-20 V-
Continuous Collector Current at 25 C-140 A-
Pd Power Dissipation-455 W-
Minimum Operating Temperature-- 40 C-
Maximum Operating Temperature-+ 175 C-
Gate Emitter Leakage Current-100 nA-
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-247AD
Power Max--455W
Reverse Recovery Time trr---
Current Collector Ic Max--140A
Voltage Collector Emitter Breakdown Max--650V
IGBT Type---
Current Collector Pulsed Icm--225A
Vce on Max Vge Ic--2V @ 15V, 75A
Switching Energy--2.5mJ (on), 2.2mJ (off)
Gate Charge--210nC
Td on off 25°C--50ns/200ns
Test Condition--400V, 75A, 10 Ohm, 15V
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRGP4790PBF IGBT Transistors 650V UltraFast IGBT TO-247
Infineon Technologies
Infineon Technologies
IRGP4790DPBF IGBT Transistors 650V UltraFast IGBT TO-247
IRGP4790D-EPBF IGBT Transistors IGBT DISCRETES
Infineon Technologies
Infineon Technologies
IRGP4790D-EPBF IGBT 650V TO-247
IRGP4790-EPBF IGBT 650V TO-247
IRGP4790PBF IGBT Transistors 650V UltraFast IGBT TO-247
IRGP4790DPBF IGBT Transistors 650V UltraFast IGBT TO-247
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