| PartNumber | IRGP6630D-EPBF | IRGP6630DPBF | IRGP6640D-EPBF |
| Description | IGBT Transistors 600V UltraFast IGBT TO-247 | IGBT Transistors TO-247 | IGBT Transistors 600V UltraFast IGBT TO-247 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | IGBT Transistors | IGBT Transistors | IGBTs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-247AD-3 | TO-247AC-3 | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
| Collector Emitter Saturation Voltage | 1.65 V | 1.65 V | 1.65 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 47 A | 47 A | 53 A |
| Pd Power Dissipation | 192 W | 192 W | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 47 A | 47 A | 53 A |
| Height | 20.7 mm | 20.7 mm | - |
| Length | 15.87 mm | 15.87 mm | - |
| Width | 5.31 mm | 5.31 mm | - |
| Brand | Infineon / IR | Infineon Technologies | - |
| Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 25 | 400 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | SP001540762 | SP001548332 | - |
| Unit Weight | 0.229281 oz | 0.068784 oz | 0.229281 oz |
| Series | - | - | - |
| Package Case | - | - | TO-247-3 |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-247AD |
| Power Max | - | - | 200W |
| Reverse Recovery Time trr | - | - | 70ns |
| Current Collector Ic Max | - | - | 53A |
| Voltage Collector Emitter Breakdown Max | - | - | 600V |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | - | - | 72A |
| Vce on Max Vge Ic | - | - | 1.95V @ 15V, 24A |
| Switching Energy | - | - | 90μJ (on), 600μJ (off) |
| Gate Charge | - | - | 50nC |
| Td on off 25°C | - | - | 40ns/100ns |
| Test Condition | - | - | 400V, 24A, 10 Ohm, 15V |
| Pd Power Dissipation | - | - | 200 W |
| Collector Emitter Voltage VCEO Max | - | - | 600 V |