 |  | | |
| PartNumber | IRL1104STRLPBF | IRL1104STRL | IRL1104STRR |
| Description | MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC | MOSFET N-CH 40V 104A D2PAK | MOSFET N-CH 40V 104A D2PAK |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 104 A | - | - |
| Rds On Drain Source Resistance | 8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Qg Gate Charge | 68 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 167 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 53 S | - | - |
| Fall Time | 64 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 257 ns | - | - |
| Factory Pack Quantity | 3200 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 32 ns | - | - |
| Typical Turn On Delay Time | 18 ns | - | - |
| Part # Aliases | SP001576402 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
IRL1104STRLPBF | MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC | |
Infineon Technologies |
IRL1104STRL | MOSFET N-CH 40V 104A D2PAK | |
| IRL1104STRR | MOSFET N-CH 40V 104A D2PAK | ||
| IRL1104STRLPBF | MOSFET N-CH 40V 104A D2PAK |