IRL2703S

IRL2703SPBF vs IRL2703S vs IRL2703STRL

 
PartNumberIRL2703SPBFIRL2703SIRL2703STRL
DescriptionMOSFET 30V 1 N-CH HEXFET 40mOhms 10nCMOSFET N-CH 30V 24A D2PAKMOSFET N-CH 30V 24A D2PAK
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current24 A--
Rds On Drain Source Resistance60 mOhms--
Vgs Gate Source Voltage16 V--
Qg Gate Charge10 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation45 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
TypePreliminary--
Width6.22 mm--
BrandInfineon / IR--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time140 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12 ns--
Typical Turn On Delay Time8.5 ns--
Part # AliasesSP001550348--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRL2703SPBF MOSFET 30V 1 N-CH HEXFET 40mOhms 10nC
Infineon Technologies
Infineon Technologies
IRL2703SPBF MOSFET N-CH 30V 24A D2PAK
IRL2703STRR MOSFET N-CH 30V 24A D2PAK
IRL2703S MOSFET N-CH 30V 24A D2PAK
IRL2703STRL MOSFET N-CH 30V 24A D2PAK
IRL2703STRLPBF MOSFET N-CH 30V 24A D2PAK
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