 | | | |
| PartNumber | IRL3705NSTRL | IRL3705NSPBF | IRL3705NS |
| Description | MOSFET N-CH 55V 89A D2PAK | Darlington Transistors MOSFET 55V 1 N-CH HEXFET 10mOhms 65.3nC | MOSFET N-CH 55V 89A D2PAK |
| Manufacturer | - | International Rectifier | IR |
| Product Category | - | Transistors - FETs, MOSFETs - Single | FETs - Single |
| Packaging | - | Tube | - |
| Unit Weight | - | 0.139332 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | TO-252-3 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 170 W | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 78 ns | - |
| Rise Time | - | 140 ns | - |
| Vgs Gate Source Voltage | - | 16 V | - |
| Id Continuous Drain Current | - | 89 A | - |
| Vds Drain Source Breakdown Voltage | - | 55 V | - |
| Vgs th Gate Source Threshold Voltage | - | 1 V to 2 V | - |
| Rds On Drain Source Resistance | - | 10 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 37 ns | - |
| Typical Turn On Delay Time | - | 12 ns | - |
| Qg Gate Charge | - | 65.3 nC | - |
| Forward Transconductance Min | - | 50 S | - |
| Channel Mode | - | Enhancement | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IRL3705NSTRLPBF | MOSFET MOSFT 55V 89A 10mOhm 65.3nC LogLvl | |
| IRL3705NSTRL | MOSFET N-CH 55V 89A D2PAK | ||
| IRL3705NSTRR | MOSFET N-CH 55V 89A D2PAK | ||
| IRL3705NSPBF | Darlington Transistors MOSFET 55V 1 N-CH HEXFET 10mOhms 65.3nC | ||
| IRL3705NSTRLPBF | Darlington Transistors MOSFET MOSFT 55V 89A 10mOhm 65.3nC LogLvl | ||
| IRL3705NS | MOSFET N-CH 55V 89A D2PAK | ||
| IRL3705NS L3705NS | Neu und Original | ||
| IRL3705NSTRLPBF-EL | Trans MOSFET N-CH 55V 89A 3-Pin D2PAK T/R (Alt: SP001558012) | ||
| IRL3705NSTRPBF,L3705NS,I | Neu und Original |