 |  | | |
| PartNumber | IRLB4132PBF | IRLB4132 | IRLB4132PBF. |
| Description | MOSFET TRENCH_MOSFETS | ||
| Manufacturer | Infineon | IR | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 150 A | - | - |
| Rds On Drain Source Resistance | 2.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.35 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 54 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 140 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | StrongIRFET | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 190 S | - | - |
| Fall Time | 36 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 92 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 23 ns | - | - |
| Part # Aliases | SP001558130 | - | - |
| Unit Weight | 0.035274 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
IRLB4132PBF | MOSFET TRENCH_MOSFETS | |
| IRLB4132 | Neu und Original | ||
| IRLB4132PBF. | Neu und Original | ||
Infineon Technologies |
IRLB4132PBF | MOSFET N-CH 30V 78A TO220 |