IRLH5030

IRLH5030TRPBF vs IRLH5030 vs IRLH5030TRPBF-EL

 
PartNumberIRLH5030TRPBFIRLH5030IRLH5030TRPBF-EL
DescriptionMOSFET 100V 1 N-CH HEXFET 9mOhms 44nCTrans MOSFET N-CH 100V 13A 8-Pin PQFN T/R (Alt: IRLH5030TRPBF-EL)
ManufacturerInfineonIR-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePQFN-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current88 A--
Rds On Drain Source Resistance9.9 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage16 V--
Qg Gate Charge44 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation3.6 W--
ConfigurationSingleSingle Quad Drain Triple Source-
PackagingReelReel-
Height0.83 mm--
Length6 mm--
Transistor Type1 N-Channel1 N-Channel-
Width5 mm--
BrandInfineon / IR--
Forward Transconductance Min160 S--
Fall Time41 ns41 ns-
Product TypeMOSFET--
Rise Time72 ns72 ns-
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time41 ns41 ns-
Typical Turn On Delay Time21 ns21 ns-
Part # AliasesSP001558752--
Package Case-PQFN-8-
Pd Power Dissipation-3.6 W-
Vgs Gate Source Voltage-16 V-
Id Continuous Drain Current-88 A-
Vds Drain Source Breakdown Voltage-100 V-
Vgs th Gate Source Threshold Voltage-2.5 V-
Rds On Drain Source Resistance-9.9 mOhms-
Qg Gate Charge-44 nC-
Forward Transconductance Min-160 S-
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRLH5030TRPBF MOSFET 100V 1 N-CH HEXFET 9mOhms 44nC
IRLH5030 Neu und Original
IRLH5030TRPBF-EL Trans MOSFET N-CH 100V 13A 8-Pin PQFN T/R (Alt: IRLH5030TRPBF-EL)
IRLH5030TRPBF. Neu und Original
Infineon Technologies
Infineon Technologies
IRLH5030TR2PBF MOSFET N-CH 100V 13A 8PQFN
IRLH5030TRPBF MOSFET N-CH 100V 13A 8PQFN
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