 |  | | |
| PartNumber | IRLR014NTRPBF | IRLR014NTR | IRLR014NTRL |
| Description | MOSFET 55V 1 N-CH HEXFET 140mOhms 5.3nC | MOSFET N-CH 55V 10A DPAK | MOSFET N-CH 55V 10A DPAK |
| Manufacturer | Infineon | IR | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 10 A | - | - |
| Rds On Drain Source Resistance | 210 mOhms | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Qg Gate Charge | 5.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 28 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 23 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 47 ns | - | - |
| Factory Pack Quantity | 6000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12 ns | - | - |
| Typical Turn On Delay Time | 6.5 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
IRLR014NTRPBF | MOSFET 55V 1 N-CH HEXFET 140mOhms 5.3nC | |
Infineon Technologies |
IRLR014NTR | MOSFET N-CH 55V 10A DPAK | |
| IRLR014NTRPBF | MOSFET N-CH 55V 10A DPAK | ||
| IRLR014NTRL | MOSFET N-CH 55V 10A DPAK | ||
| IRLR014NTRR | MOSFET N-CH 55V 10A DPAK | ||
| IRLR014NTRPBF,IRLR014RB, | Neu und Original | ||
| IRLR014NTRPBF,LR014N,IRL | Neu und Original |