IRLR3105TRP

IRLR3105TRPBF vs IRLR3105TRPBF,IRLR3105PB vs IRLR3105TRPBF-CUT TAPE

 
PartNumberIRLR3105TRPBFIRLR3105TRPBF,IRLR3105PBIRLR3105TRPBF-CUT TAPE
DescriptionMOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current25 A--
Rds On Drain Source Resistance43 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage16 V--
Qg Gate Charge13.3 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation57 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
TypeHEXFET Power MOSFET--
Width6.22 mm--
BrandInfineon / IR--
Forward Transconductance Min15 S--
Fall Time37 ns--
Product TypeMOSFET--
Rise Time57 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns--
Typical Turn On Delay Time8 ns--
Part # AliasesSP001578856--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRLR3105TRPBF MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC
Infineon Technologies
Infineon Technologies
IRLR3105TRPBF MOSFET N-CH 55V 25A DPAK
IRLR3105TRPBF,IRLR3105PB Neu und Original
IRLR3105TRPBF. Neu und Original
IRLR3105TRPBF-CUT TAPE Neu und Original
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