IRLR8103VTR

IRLR8103VTRPBF vs IRLR8103VTRLPBF vs IRLR8103VTRL

 
PartNumberIRLR8103VTRPBFIRLR8103VTRLPBFIRLR8103VTRL
DescriptionMOSFET 30V 1 N-CH HEXFET 9mOhms 27nCMOSFET 30V 1 N-CH HEXFET 9mOhms 27nCMOSFET N-CH 30V 91A DPAK
ManufacturerInfineonInfineonIR
Product CategoryMOSFETMOSFETIC Chips
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current91 A89 A-
Rds On Drain Source Resistance10.5 mOhms10.5 mOhms-
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge27 nC27 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation115 W89 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel-
TypeHEXFET Power MOSFETHEXFET Power MOSFET-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon / IR-
Fall Time18 ns18 ns-
Product TypeMOSFETMOSFET-
Rise Time9 ns9 ns-
Factory Pack Quantity20003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time24 ns24 ns-
Typical Turn On Delay Time10 ns10 ns-
Part # AliasesSP001558514SP001558542-
Unit Weight0.139332 oz0.139332 oz-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IRLR8103VTRPBF MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC
IRLR8103VTRL MOSFET N-CH 30V 91A DPAK
IRLR8103VTRLPBF MOSFET N-CH 30V 91A DPAK
IRLR8103VTRPBF MOSFET N-CH 30V 91A DPAK
IRLR8103VTRR MOSFET N-CH 30V 91A DPAK
IRLR8103VTRRPBF MOSFET N-CH 30V 91A DPAK
Infineon / IR
Infineon / IR
IRLR8103VTRLPBF MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC
IRLR8103VTR Neu und Original
IRLR8103VTRPBF. Continuous Drain Current Id:91A, Drain Source Voltage Vds:30V, Automotive Qualification Standard:- RoHS Compliant: Yes
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