IRLZ34NS

IRLZ34NSTRLPBF vs IRLZ34NSPBF vs IRLZ34NS

 
PartNumberIRLZ34NSTRLPBFIRLZ34NSPBFIRLZ34NS
DescriptionMOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvlMOSFET 55V 1 N-CH HEXFET 35mOhms 16.7nCMOSFET N-CH 55V 30A D2PAK
ManufacturerInfineonInfineonIR
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage55 V55 V-
Id Continuous Drain Current30 A30 A-
Rds On Drain Source Resistance60 mOhms60 mOhms-
Vgs Gate Source Voltage16 V16 V-
Qg Gate Charge16.7 nC16.7 nC-
Pd Power Dissipation68 W68 W-
ConfigurationSingleSingle-
PackagingReelTube-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon / IR-
Product TypeMOSFETMOSFET-
Factory Pack Quantity8001000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001573060SP001568692-
Unit Weight0.139332 oz0.139332 oz-
Vgs th Gate Source Threshold Voltage-2 V-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Channel Mode-Enhancement-
Type-HEXFET Power MOSFET-
Forward Transconductance Min-11 S-
Fall Time-29 ns-
Rise Time-100 ns-
Typical Turn Off Delay Time-21 ns-
Typical Turn On Delay Time-8.9 ns-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IRLZ34NSTRLPBF MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl
IRLZ34NS MOSFET N-CH 55V 30A D2PAK
IRLZ34NSTRR MOSFET N-CH 55V 30A D2PAK
IRLZ34NSPBF Darlington Transistors MOSFET 55V 1 N-CH HEXFET 35mOhms 16.7nC
IRLZ34NSTRLPBF Darlington Transistors MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl
Infineon / IR
Infineon / IR
IRLZ34NSPBF MOSFET 55V 1 N-CH HEXFET 35mOhms 16.7nC
IRLZ34NSTRPBF Neu und Original
IRLZ34NSTRRPBF Neu und Original
IRLZ34NSTRLPBF-CUT TAPE Neu und Original
Top