IXDH30

IXDH30N120D1 vs IXDH30N120 vs IXDH30N120AU1

 
PartNumberIXDH30N120D1IXDH30N120IXDH30N120AU1
DescriptionIGBT Transistors 30 Amps 1200VIGBT Transistors 30 Amps 1200V
ManufacturerIXYSIXYS-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-3TO-247-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1.2 kV1.2 kV-
Collector Emitter Saturation Voltage2.4 V2.4 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C60 A60 A-
Pd Power Dissipation300 W300 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesIXDH30N120IXDH30N120-
PackagingTubeTube-
Continuous Collector Current Ic Max76 A76 A-
Height21.46 mm21.46 mm-
Length16.26 mm16.26 mm-
Operating Temperature Range- 55 C to + 150 C- 55 C to + 150 C-
Width5.3 mm5.3 mm-
BrandIXYSIXYS-
Continuous Collector Current60 A60 A-
Gate Emitter Leakage Current500 nA500 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Unit Weight0.229281 oz0.229281 oz-
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXDH30N120D1 IGBT Transistors 30 Amps 1200V
IXDH30N120 IGBT Transistors 30 Amps 1200V
IXDH30N120AU1 Neu und Original
IXDH30N120D1 IGBT Transistors 30 Amps 1200V
IXDH30N120 IGBT Transistors 30 Amps 1200V
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