IXFE44N5

IXFE44N50Q vs IXFE44N50QD2 vs IXFE44N50QD3

 
PartNumberIXFE44N50QIXFE44N50QD2IXFE44N50QD3
DescriptionMOSFET 44 Amps 500V 0.12 RdsMOSFET 44 Amps 500V 0.12 RdsMOSFET 44 Amps 500V 0.12 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleChassis MountSMD/SMTSMD/SMT
Package / CaseISOPLUS-227-4--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current39 A--
Rds On Drain Source Resistance120 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation400 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHyperFET--
PackagingTubeTubeTube
Height9.65 mm--
Length38.23 mm--
SeriesIXFE44N50QIXFE44N50QD2IXFE44N50QD3
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width25.42 mm--
BrandIXYS--
Fall Time10 ns10 ns10 ns
Product TypeMOSFET--
Rise Time22 ns22 ns22 ns
Factory Pack Quantity10--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns75 ns75 ns
Typical Turn On Delay Time33 ns33 ns33 ns
Package Case-ISOPLUS-227-4ISOPLUS-227-4
Pd Power Dissipation-400 W400 W
Vgs Gate Source Voltage-20 V20 V
Id Continuous Drain Current-39 A39 A
Vds Drain Source Breakdown Voltage-500 V500 V
Rds On Drain Source Resistance-120 mOhms120 mOhms
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFE44N50Q MOSFET 44 Amps 500V 0.12 Rds
IXFE44N50QD2 MOSFET 44 Amps 500V 0.12 Rds
IXFE44N50QD3 MOSFET 44 Amps 500V 0.12 Rds
IXFE44N50Q MOSFET 44 Amps 500V 0.12 Rds
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