IXFH10N

IXFH10N100 vs IXFH10N100P vs IXFH10N100Q

 
PartNumberIXFH10N100IXFH10N100PIXFH10N100Q
DescriptionMOSFET 1KV 10ADarlington Transistors MOSFET 10 Amps 1000VMOSFET 12 Amps 1000V 1.05 Rds
ManufacturerIXYSIXYS-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1 kV--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance1.2 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancementEnhancement-
TradenameHyperFETPolar HiPerFET-
PackagingTubeTube-
Height21.46 mm--
Length16.26 mm--
SeriesIXFH10N100IXFH10N100P-
Transistor Type1 N-Channel1 N-Channel-
Width5.3 mm--
BrandIXYS--
Forward Transconductance Min10 S--
Fall Time32 ns75 ns-
Product TypeMOSFET--
Rise Time33 ns45 ns-
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time62 ns47 ns-
Typical Turn On Delay Time21 ns38 ns-
Unit Weight0.229281 oz0.229281 oz-
Package Case-TO-247-3-
Pd Power Dissipation-380 W-
Vgs Gate Source Voltage-30 V-
Id Continuous Drain Current-10 A-
Vds Drain Source Breakdown Voltage-1000 V-
Vgs th Gate Source Threshold Voltage-6.5 V-
Rds On Drain Source Resistance-1.4 Ohms-
Qg Gate Charge-56 nC-
Forward Transconductance Min-4.2 S-
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFH10N80P MOSFET 10 Amps 800V 1.1 Rds
IXFH10N100 MOSFET 1KV 10A
IXFH10N100P Darlington Transistors MOSFET 10 Amps 1000V
IXFH10N100 MOSFET 1KV 10A
IXFH10N100Q MOSFET 12 Amps 1000V 1.05 Rds
IXFH10N90 MOSFET 10 Amps 900V
IXFH10N80P IGBT Transistors MOSFET 10 Amps 800V 1.1 Rds
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