IXFH11

IXFH110N10P vs IXFH110N15T2 vs IXFH110N25T

 
PartNumberIXFH110N10PIXFH110N15T2IXFH110N25T
DescriptionMOSFET 110 Amps 100V 0.015 RdsMOSFET 110 Amps 150VMOSFET 110 Amps 0V
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V150 V250 V
Id Continuous Drain Current110 A150 A110 A
Rds On Drain Source Resistance15 mOhms13 mOhms24 mOhms
Vgs th Gate Source Threshold Voltage5 V4.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge110 nC150 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation480 W480 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFETHiPerFET
PackagingTubeTubeTube
Height21.46 mm--
Length16.26 mm--
SeriesIXFH110N10PIXFH110N15T2IXFH110N25T
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolarHT HiPerFET Power MOSFETPower MOSFET-
Width5.3 mm--
BrandIXYSIXYSIXYS
Forward Transconductance Min30 S115 S-
Fall Time25 ns18 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time25 ns16 ns-
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time65 ns33 ns-
Typical Turn On Delay Time21 ns33 ns-
Unit Weight0.229281 oz0.229281 oz0.056438 oz
Product-MOSFET Power-
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFH110N10P MOSFET 110 Amps 100V 0.015 Rds
IXFH110N15T2 MOSFET 110 Amps 150V
IXFH110N25T MOSFET 110 Amps 0V
IXFH11N80 MOSFET 11 Amps 800V
IXFH11N100 Neu und Original
IXFH110N10P Darlington Transistors MOSFET 110 Amps 100V 0.015 Rds
IXFH11N80 MOSFET 11 Amps 800V
IXFH110N25T MOSFET 110 Amps 0V
IXFH110N15T2 MOSFET 110 Amps 150V
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