IXFH14N

IXFH14N60P vs IXFH14N60P3 vs IXFH14N100Q2

 
PartNumberIXFH14N60PIXFH14N60P3IXFH14N100Q2
DescriptionMOSFET 600V 14AMOSFET Polar3 HiPerFETs Power MOSFETsMOSFET 14 Amps 1000V 0.90 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V1 kV
Id Continuous Drain Current14 A14 A14 A
Rds On Drain Source Resistance550 mOhms540 mOhms900 mOhms
Vgs Gate Source Voltage30 V-30 V
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation300 W-500 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenameHiPerFETHiPerFETHyperFET
PackagingTubeTubeTube
Height21.46 mm-21.46 mm
Length16.26 mm-16.26 mm
SeriesIXFH14N60IXFH14N60IXFH14N100
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.3 mm-5.3 mm
BrandIXYSIXYSIXYS
Forward Transconductance Min13 S--
Fall Time26 ns-12 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time27 ns-10 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time70 ns-28 ns
Typical Turn On Delay Time23 ns-12 ns
Unit Weight0.229281 oz0.056438 oz0.229281 oz
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFH14N60P MOSFET 600V 14A
IXFH14N60P3 MOSFET Polar3 HiPerFETs Power MOSFETs
IXFH14N80P MOSFET DIODE Id14 BVdass800
IXFH14N85X MOSFET DISCMSFT NCH ULTRJNCTN XCLASS
IXFH14N100Q2 MOSFET 14 Amps 1000V 0.90 Rds
IXFH14N80 MOSFET 14 Amps 800V 0.7 Rds
IXFH14N100 MOSFET N-CH 1000V 14A TO-247
IXFH14N60 Neu und Original
IXFH14N100Q MOSFET N-CH 1000V 14A TO247AD
IXFH14N85X MOSFET N-CH 850V 14A TO247AD
IXFH14N80P Darlington Transistors MOSFET DIODE Id14 BVdass800
IXFH14N60P Darlington Transistors MOSFET 600V 14A
IXFH14N100Q2 MOSFET 14 Amps 1000V 0.90 Rds
IXFH14N80 MOSFET 14 Amps 800V 0.7 Rds
IXFH14N60P3 MOSFET Polar3 HiPerFETs Power MOSFETs
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