IXFH30N6

IXFH30N60P vs IXFH30N60X vs IXFH30N60Q

 
PartNumberIXFH30N60PIXFH30N60XIXFH30N60Q
DescriptionMOSFET 600V 30AMOSFET DISCMSFT NCH ULTRJNCTN XCLASSMOSFET 30 Amps 600V 0.23 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V600 V
Id Continuous Drain Current30 A30 A30 A
Rds On Drain Source Resistance240 mOhms155 mOhms230 mOhms
Vgs Gate Source Voltage30 V30 V20 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation500 W500 W500 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHiPerFETHyperFET
PackagingTube-Tube
Height21.46 mm-21.46 mm
Length16.26 mm-16.26 mm
SeriesIXFH30N60-IXFH30N60
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.3 mm-5.3 mm
BrandIXYSIXYSIXYS
Forward Transconductance Min27 S--
Fall Time25 ns33 ns16 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time20 ns43 ns32 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time80 ns58 ns80 ns
Typical Turn On Delay Time29 ns21 ns30 ns
Unit Weight0.229281 oz-0.229281 oz
Vgs th Gate Source Threshold Voltage-2.5 V-
Qg Gate Charge-56 nC-
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFH30N60P MOSFET 600V 30A
IXFH30N60X MOSFET DISCMSFT NCH ULTRJNCTN XCLASS
IXFH30N60Q MOSFET 30 Amps 600V 0.23 Rds
IXFH30N60X MOSFET N-CH 600V 30A TO-247AD
IXFH30N60Q MOSFET 30 Amps 600V 0.23 Rds
IXFH30N60P IGBT Transistors MOSFET 600V 30A
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