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| PartNumber | IXFH32N500Q | IXFH32N50P | IXFH32N50 |
| Description | MOSFET 500V 32A | ||
| Manufacturer | - | - | IXYS |
| Product Category | - | - | FETs - Single |
| Series | - | - | IXFH32N50 |
| Packaging | - | - | Tube |
| Unit Weight | - | - | 0.229281 oz |
| Mounting Style | - | - | Through Hole |
| Tradename | - | - | HyperFET |
| Package Case | - | - | TO-247-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 360 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 26 ns |
| Rise Time | - | - | 42 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 32 A |
| Vds Drain Source Breakdown Voltage | - | - | 500 V |
| Rds On Drain Source Resistance | - | - | 150 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 110 ns |
| Typical Turn On Delay Time | - | - | 35 ns |
| Forward Transconductance Min | - | - | 28 S |
| Channel Mode | - | - | Enhancement |