IXFH40N3

IXFH40N30 vs IXFH40N30P3 vs IXFH40N30Q

 
PartNumberIXFH40N30IXFH40N30P3IXFH40N30Q
DescriptionMOSFET 300V 40AMOSFET N-CH 300V 40A TO-247AD
ManufacturerIXYS-IXYS
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-247-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage300 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance85 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation300 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameHyperFET-HyperFET
PackagingTube-Tube
Height21.46 mm--
Length16.26 mm--
SeriesIXFH40N30-HiPerFET
Transistor Type1 N-Channel-1 N-Channel
Width5.3 mm--
BrandIXYS--
Forward Transconductance Min25 S--
Fall Time45 ns-12 ns
Product TypeMOSFET--
Rise Time60 ns-35 ns
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns-40 ns
Typical Turn On Delay Time20 ns-20 ns
Unit Weight0.229281 oz-0.229281 oz
Package Case--TO-247-3
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Through Hole
Supplier Device Package--TO-247AD (IXFH)
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--300W
Drain to Source Voltage Vdss--300V
Input Capacitance Ciss Vds--3100pF @ 25V
FET Feature--Standard
Current Continuous Drain Id 25°C--40A (Tc)
Rds On Max Id Vgs--80 mOhm @ 500mA, 10V
Vgs th Max Id--4V @ 4mA
Gate Charge Qg Vgs--140nC @ 10V
Pd Power Dissipation--300 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--40 A
Vds Drain Source Breakdown Voltage--300 V
Rds On Drain Source Resistance--80 mOhms
Forward Transconductance Min--30 S
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFH40N30 MOSFET 300V 40A
IXFH40N30P3 Neu und Original
IXFH40N30Q MOSFET N-CH 300V 40A TO-247AD
IXFH40N30S Neu und Original
IXFH40N30 MOSFET 300V 40A
Top