PartNumber | IXFH40N30 | IXFH40N30P3 | IXFH40N30Q |
Description | MOSFET 300V 40A | MOSFET N-CH 300V 40A TO-247AD | |
Manufacturer | IXYS | - | IXYS |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-247-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 300 V | - | - |
Id Continuous Drain Current | 40 A | - | - |
Rds On Drain Source Resistance | 85 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 300 W | - | - |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | HyperFET | - | HyperFET |
Packaging | Tube | - | Tube |
Height | 21.46 mm | - | - |
Length | 16.26 mm | - | - |
Series | IXFH40N30 | - | HiPerFET |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 5.3 mm | - | - |
Brand | IXYS | - | - |
Forward Transconductance Min | 25 S | - | - |
Fall Time | 45 ns | - | 12 ns |
Product Type | MOSFET | - | - |
Rise Time | 60 ns | - | 35 ns |
Factory Pack Quantity | 30 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 75 ns | - | 40 ns |
Typical Turn On Delay Time | 20 ns | - | 20 ns |
Unit Weight | 0.229281 oz | - | 0.229281 oz |
Package Case | - | - | TO-247-3 |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Through Hole |
Supplier Device Package | - | - | TO-247AD (IXFH) |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 300W |
Drain to Source Voltage Vdss | - | - | 300V |
Input Capacitance Ciss Vds | - | - | 3100pF @ 25V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 40A (Tc) |
Rds On Max Id Vgs | - | - | 80 mOhm @ 500mA, 10V |
Vgs th Max Id | - | - | 4V @ 4mA |
Gate Charge Qg Vgs | - | - | 140nC @ 10V |
Pd Power Dissipation | - | - | 300 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 40 A |
Vds Drain Source Breakdown Voltage | - | - | 300 V |
Rds On Drain Source Resistance | - | - | 80 mOhms |
Forward Transconductance Min | - | - | 30 S |