IXFH75N10 stock, IXFH75N10, IXFH75N10


PartNumber	IXFH75N10	IXFH75N10E	IXFH75N10Q
Description	MOSFET 100V 75A		MOSFET 75 Amps 100V 0.02 Rds
Manufacturer	IXYS	-	IXYS
Product Category	MOSFET	-	FETs - Single
RoHS	Y	-	-
Technology	Si	-	Si
Mounting Style	Through Hole	-	Through Hole
Package / Case	TO-247-3	-	-
Number of Channels	1 Channel	-	1 Channel
Transistor Polarity	N-Channel	-	N-Channel
Vds Drain Source Breakdown Voltage	100 V	-	-
Id Continuous Drain Current	75 A	-	-
Rds On Drain Source Resistance	20 mOhms	-	-
Vgs Gate Source Voltage	20 V	-	-
Minimum Operating Temperature	- 55 C	-	- 55 C
Maximum Operating Temperature	+ 150 C	-	+ 150 C
Pd Power Dissipation	300 W	-	-
Configuration	Single	-	Single
Channel Mode	Enhancement	-	Enhancement
Tradename	HyperFET	-	HyperFET
Packaging	Tube	-	Tube
Height	21.46 mm	-	-
Length	16.26 mm	-	-
Series	IXFH75N10	-	IXFH75N10
Transistor Type	1 N-Channel	-	1 N-Channel
Width	5.3 mm	-	-
Brand	IXYS	-	-
Forward Transconductance Min	30 S	-	-
Fall Time	60 ns	-	28 ns
Product Type	MOSFET	-	-
Rise Time	60 ns	-	65 ns
Factory Pack Quantity	30	-	-
Subcategory	MOSFETs	-	-
Typical Turn Off Delay Time	80 ns	-	65 ns
Typical Turn On Delay Time	20 ns	-	31 ns
Unit Weight	0.229281 oz	-	0.229281 oz
Package Case	-	-	TO-247-3
Pd Power Dissipation	-	-	300 W
Vgs Gate Source Voltage	-	-	20 V
Id Continuous Drain Current	-	-	75 A
Vds Drain Source Breakdown Voltage	-	-	100 V
Rds On Drain Source Resistance	-	-	20 mOhms