IXFK10

IXFK100N65X2 vs IXFK100N10 vs IXFK100N25

 
PartNumberIXFK100N65X2IXFK100N10IXFK100N25
DescriptionMOSFET MOSFET 650V/100A Ultra Junction X2MOSFET 100 Amps 100V 0.012 Ohm RdsMOSFET 100 Amps 250V 0.027 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-264-3TO-264-3TO-264-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V100 V250 V
Id Continuous Drain Current100 A100 A100 A
Rds On Drain Source Resistance30 mOhms12 mOhms27 mOhms
Vgs th Gate Source Threshold Voltage2.7 V--
Vgs Gate Source Voltage30 V20 V20 V
Qg Gate Charge180 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1.04 kW500 W560 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHyperFETHyperFET
PackagingTubeTubeTube
Series650V Ultra Junction X2IXFK100N10IXFK100N25
BrandIXYSIXYSIXYS
Forward Transconductance Min40 S--
Fall Time7 ns60 ns40 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time24 ns60 ns55 ns
Factory Pack Quantity252525
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time83 ns100 ns110 ns
Typical Turn On Delay Time59 ns30 ns42 ns
Unit Weight0.264555 oz0.352740 oz0.352740 oz
Height-26.16 mm26.16 mm
Length-19.96 mm19.96 mm
Transistor Type-1 N-Channel1 N-Channel
Width-5.13 mm5.13 mm
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFK100N65X2 MOSFET MOSFET 650V/100A Ultra Junction X2
IXFK102N30P MOSFET 102 Amps 300V 0.033 Rds
IXFK100N10 MOSFET 100 Amps 100V 0.012 Ohm Rds
IXFK100N25 MOSFET 100 Amps 250V 0.027 Rds
IXFK100N50P Neu und Original
IXFK100N65X2 MOSFET N-CH 650V 100A TO-264
IXFK102N30P Darlington Transistors MOSFET 102 Amps 300V 0.033 Rds
IXFK100N10 MOSFET 100 Amps 100V 0.012 Ohm Rds
IXFK100N25 MOSFET 100 Amps 250V 0.027 Rds
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