PartNumber | IXFK100N65X2 | IXFK100N10 | IXFK100N25 |
Description | MOSFET MOSFET 650V/100A Ultra Junction X2 | MOSFET 100 Amps 100V 0.012 Ohm Rds | MOSFET 100 Amps 250V 0.027 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-264-3 | TO-264-3 | TO-264-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 100 V | 250 V |
Id Continuous Drain Current | 100 A | 100 A | 100 A |
Rds On Drain Source Resistance | 30 mOhms | 12 mOhms | 27 mOhms |
Vgs th Gate Source Threshold Voltage | 2.7 V | - | - |
Vgs Gate Source Voltage | 30 V | 20 V | 20 V |
Qg Gate Charge | 180 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1.04 kW | 500 W | 560 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | HiPerFET | HyperFET | HyperFET |
Packaging | Tube | Tube | Tube |
Series | 650V Ultra Junction X2 | IXFK100N10 | IXFK100N25 |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 40 S | - | - |
Fall Time | 7 ns | 60 ns | 40 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 24 ns | 60 ns | 55 ns |
Factory Pack Quantity | 25 | 25 | 25 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 83 ns | 100 ns | 110 ns |
Typical Turn On Delay Time | 59 ns | 30 ns | 42 ns |
Unit Weight | 0.264555 oz | 0.352740 oz | 0.352740 oz |
Height | - | 26.16 mm | 26.16 mm |
Length | - | 19.96 mm | 19.96 mm |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Width | - | 5.13 mm | 5.13 mm |