IXFK150N1

IXFK150N10 vs IXFK150N15 vs IXFK150N15P

 
PartNumberIXFK150N10IXFK150N15IXFK150N15P
DescriptionMOSFET 150 Amps 100VMOSFET 150 Amps 150V 0.0125 RdsMOSFET 170 Amps 150V 0.013 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-264-3TO-264-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V150 V-
Id Continuous Drain Current150 A150 A-
Rds On Drain Source Resistance12 mOhms12.5 mOhms-
ConfigurationSingleSingleSingle
TradenameHyperFETHyperFETHyperFET
PackagingTubeTubeTube
SeriesIXFK150N10IXFK150N15IXFK150N15
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandIXYSIXYS-
Product TypeMOSFETMOSFET-
Factory Pack Quantity2525-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.352740 oz0.352740 oz0.352740 oz
Vgs Gate Source Voltage-20 V-
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 175 C
Pd Power Dissipation-560 W-
Channel Mode-EnhancementEnhancement
Height-26.16 mm-
Length-19.96 mm-
Width-5.13 mm-
Fall Time-45 ns28 ns
Rise Time-60 ns33 ns
Typical Turn Off Delay Time-110 ns100 ns
Typical Turn On Delay Time-50 ns30 ns
Package Case--TO-264-3
Pd Power Dissipation--714 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--150 A
Vds Drain Source Breakdown Voltage--150 V
Rds On Drain Source Resistance--13 mOhms
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFK150N10 MOSFET 150 Amps 100V
IXFK150N15 MOSFET 150 Amps 150V 0.0125 Rds
IXFK150N10 MOSFET 150 Amps 100V
IXFK150N15 MOSFET 150 Amps 150V 0.0125 Rds
IXFK150N15P MOSFET 170 Amps 150V 0.013 Rds
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