PartNumber | IXFK150N10 | IXFK150N15 | IXFK150N15P |
Description | MOSFET 150 Amps 100V | MOSFET 150 Amps 150V 0.0125 Rds | MOSFET 170 Amps 150V 0.013 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-264-3 | TO-264-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 150 V | - |
Id Continuous Drain Current | 150 A | 150 A | - |
Rds On Drain Source Resistance | 12 mOhms | 12.5 mOhms | - |
Configuration | Single | Single | Single |
Tradename | HyperFET | HyperFET | HyperFET |
Packaging | Tube | Tube | Tube |
Series | IXFK150N10 | IXFK150N15 | IXFK150N15 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | IXYS | IXYS | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 25 | 25 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.352740 oz | 0.352740 oz | 0.352740 oz |
Vgs Gate Source Voltage | - | 20 V | - |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 175 C |
Pd Power Dissipation | - | 560 W | - |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 26.16 mm | - |
Length | - | 19.96 mm | - |
Width | - | 5.13 mm | - |
Fall Time | - | 45 ns | 28 ns |
Rise Time | - | 60 ns | 33 ns |
Typical Turn Off Delay Time | - | 110 ns | 100 ns |
Typical Turn On Delay Time | - | 50 ns | 30 ns |
Package Case | - | - | TO-264-3 |
Pd Power Dissipation | - | - | 714 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 150 A |
Vds Drain Source Breakdown Voltage | - | - | 150 V |
Rds On Drain Source Resistance | - | - | 13 mOhms |