PartNumber | IXFK48N60P | IXFK48N50 | IXFK48N50Q |
Description | MOSFET 600V 48A | MOSFET DIODE Id48 BVdass500 | MOSFET 48 Amps 500V 0.1 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-264-3 | TO-264-3 | TO-264-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 500 V | 500 V |
Id Continuous Drain Current | 48 A | 48 A | 48 A |
Rds On Drain Source Resistance | 135 mOhms | 100 mOhms | 100 mOhms |
Vgs Gate Source Voltage | 30 V | 20 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 830 W | 500 W | 500 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | HiPerFET | HyperFET | HyperFET |
Packaging | Tube | Tube | Tube |
Height | 26.16 mm | 26.16 mm | 26.16 mm |
Length | 19.96 mm | 19.96 mm | 19.96 mm |
Series | IXFK48N60 | IXFK48N50 | IXFK48N50 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5.13 mm | 5.13 mm | 5.13 mm |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 53 S | 42 S | - |
Fall Time | 22 ns | 30 ns | 10 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 25 ns | 60 ns | 22 ns |
Factory Pack Quantity | 25 | 25 | 25 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 85 ns | 100 ns | 75 ns |
Typical Turn On Delay Time | 30 ns | 30 ns | 33 ns |
Unit Weight | 0.352740 oz | 0.352740 oz | 0.352740 oz |