IXFK52N

IXFK52N100X vs IXFK52N60Q2 vs IXFK52N30Q

 
PartNumberIXFK52N100XIXFK52N60Q2IXFK52N30Q
DescriptionMOSFET 52A 1000V POWER MOSFETMOSFET 52 Amps 600V 0.12 RdsMOSFET 52 Amps 300V 0.06 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-264-3TO-264-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage1 kV600 V-
Id Continuous Drain Current52 A52 A-
Rds On Drain Source Resistance125 mOhms115 mOhms-
Vgs th Gate Source Threshold Voltage3.5 V--
Vgs Gate Source Voltage10 V30 V-
Qg Gate Charge245 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1.25 kW735 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHyperFETHyperFET
PackagingTubeTubeTube
SeriesX-ClassIXFK52N60IXFK52N30
Transistor Type1 N-Channel Power MOSFET1 N-Channel1 N-Channel
BrandIXYSIXYS-
Forward Transconductance Min23 S--
Fall Time9 ns8.5 ns25 ns
Product TypeMOSFETMOSFET-
Rise Time13 ns13 ns60 ns
Factory Pack Quantity2525-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time107 ns56 ns80 ns
Typical Turn On Delay Time34 ns23 ns27 ns
Height-26.16 mm-
Length-19.96 mm-
Width-5.13 mm-
Unit Weight-0.352740 oz0.352740 oz
Package Case--TO-264-3
Pd Power Dissipation--360 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--52 A
Vds Drain Source Breakdown Voltage--300 V
Rds On Drain Source Resistance--60 mOhms
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFK52N100X MOSFET 52A 1000V POWER MOSFET
IXFK52N60Q2 MOSFET 52 Amps 600V 0.12 Rds
IXFK52N100X MOSFET 1KV 52A ULTRA JCT TO-264
IXFK52N60Q2 MOSFET 52 Amps 600V 0.12 Rds
IXFK52N30Q MOSFET 52 Amps 300V 0.06 Rds
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