IXFN24N

IXFN24N100 vs IXFN24N90Q vs IXFN24N100F

 
PartNumberIXFN24N100IXFN24N90QIXFN24N100F
DescriptionMOSFET 1KV 24AMOSFET 24 Amps 900V 0.45W RdsMOSFET N-CH 1000V 24A SOT227B
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleChassis MountChassis Mount-
Package / CaseSOT-227-4SOT-227-4-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1 kV900 V-
Id Continuous Drain Current24 A24 A-
Rds On Drain Source Resistance390 mOhms450 mOhms-
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation568 W450 mW-
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameHyperFET--
PackagingTubeTube-
Height9.6 mm--
Length38.23 mm--
SeriesIXFN24N100IXFN24N90-
Transistor Type1 N-Channel1 N-Channel-
Width25.42 mm--
BrandIXYSIXYS-
Forward Transconductance Min22 S--
Fall Time21 ns--
Product TypeMOSFETMOSFET-
Rise Time35 ns--
Factory Pack Quantity1010-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time75 ns--
Typical Turn On Delay Time35 ns--
Unit Weight1.058219 oz1.058219 oz-
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFN24N100 MOSFET 1KV 24A
IXFN24N90Q MOSFET 24 Amps 900V 0.45W Rds
IXFN24N100F MOSFET N-CH 1000V 24A SOT227B
IXFN24N100 MOSFET 1KV 24A
IXFN24N90Q MOSFET 24 Amps 900V 0.45W Rds
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