PartNumber | IXFN50N120SIC | IXFN50N50 | IXFN50N120SK |
Description | MOSFET SICARBIDE-DISCRETE MOSFET (MIN | MOSFET 50 Amps 500V 0.1 Rds | MOSFET N-CH |
Manufacturer | IXYS | IXYS | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Tradename | 0 | HyperFET | - |
Packaging | Tube | Tube | - |
Brand | IXYS | IXYS | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 10 | 10 | - |
Subcategory | MOSFETs | MOSFETs | - |
Technology | - | Si | - |
Mounting Style | - | Chassis Mount | - |
Package / Case | - | SOT-227-4 | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 500 V | - |
Id Continuous Drain Current | - | 50 A | - |
Rds On Drain Source Resistance | - | 100 mOhms | - |
Vgs Gate Source Voltage | - | 20 V | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 600 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Height | - | 9.6 mm | - |
Length | - | 38.23 mm | - |
Series | - | IXFN50N50 | - |
Transistor Type | - | 1 N-Channel | - |
Width | - | 25.42 mm | - |
Fall Time | - | 45 ns | - |
Rise Time | - | 60 ns | - |
Typical Turn Off Delay Time | - | 120 ns | - |
Typical Turn On Delay Time | - | 45 ns | - |
Unit Weight | - | 1.058219 oz | - |