IXFN70

IXFN70N100X vs IXFN70N120SK vs IXFN70N60Q2

 
PartNumberIXFN70N100XIXFN70N120SKIXFN70N60Q2
DescriptionMOSFET 1000V 65A SOT-227 Power MOSFETMOSFET SiC Power MOSFETMOSFET 70 Amps 600V
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiCSi
Mounting StyleSMD/SMTChassis MountChassis Mount
Package / CaseSOT-227-4SOT-227-4SOT-227-4
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage1000 V1.2 kV600 V
Id Continuous Drain Current65 A68 A70 A
Rds On Drain Source Resistance89 mOhms25 mOhms80 mOhms
Vgs th Gate Source Threshold Voltage3.5 V2 V-
Vgs Gate Source Voltage30 V20 V30 V
Qg Gate Charge350 nC161 nC-
Minimum Operating Temperature- 55 C- 40 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1200 W-890 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFET-HyperFET
PackagingTubeTubeTube
SeriesX-Class-IXFN70N60
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandIXYSIXYSIXYS
Forward Transconductance Min34 S--
Fall Time9 ns-12 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time20 ns-25 ns
Factory Pack Quantity101010
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time127 ns-60 ns
Typical Turn On Delay Time48 ns-26 ns
Unit Weight-1.058219 oz1.058219 oz
Height--9.6 mm
Length--38.2 mm
Width--25.07 mm
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFN70N100X MOSFET 1000V 65A SOT-227 Power MOSFET
IXFN70N120SK MOSFET SiC Power MOSFET
IXFN70N60Q2 MOSFET 70 Amps 600V
IXFN70N120SK MOSFET N-CH
IXFN70N100X MOSFET 1KV 65A ULTRA JCT SOT227
IXFN70N60Q2 MOSFET 70 Amps 600V
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