PartNumber | IXFN70N100X | IXFN70N120SK | IXFN70N60Q2 |
Description | MOSFET 1000V 65A SOT-227 Power MOSFET | MOSFET SiC Power MOSFET | MOSFET 70 Amps 600V |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | SiC | Si |
Mounting Style | SMD/SMT | Chassis Mount | Chassis Mount |
Package / Case | SOT-227-4 | SOT-227-4 | SOT-227-4 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1000 V | 1.2 kV | 600 V |
Id Continuous Drain Current | 65 A | 68 A | 70 A |
Rds On Drain Source Resistance | 89 mOhms | 25 mOhms | 80 mOhms |
Vgs th Gate Source Threshold Voltage | 3.5 V | 2 V | - |
Vgs Gate Source Voltage | 30 V | 20 V | 30 V |
Qg Gate Charge | 350 nC | 161 nC | - |
Minimum Operating Temperature | - 55 C | - 40 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1200 W | - | 890 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | HiPerFET | - | HyperFET |
Packaging | Tube | Tube | Tube |
Series | X-Class | - | IXFN70N60 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 34 S | - | - |
Fall Time | 9 ns | - | 12 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 20 ns | - | 25 ns |
Factory Pack Quantity | 10 | 10 | 10 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 127 ns | - | 60 ns |
Typical Turn On Delay Time | 48 ns | - | 26 ns |
Unit Weight | - | 1.058219 oz | 1.058219 oz |
Height | - | - | 9.6 mm |
Length | - | - | 38.2 mm |
Width | - | - | 25.07 mm |