IXFP10N

IXFP10N80P vs IXFP10N60P vs IXFP10N06P

 
PartNumberIXFP10N80PIXFP10N60PIXFP10N06P
DescriptionMOSFET 10 Amps 800V 1.1 RdsMOSFET HiPERFET Id10 BVdass600
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage800 V600 V-
Id Continuous Drain Current10 A10 A-
Rds On Drain Source Resistance1.1 Ohms740 mOhms-
Vgs th Gate Source Threshold Voltage5.5 V--
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge40 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation300 W200 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
Height16 mm9.15 mm-
Length10.66 mm10.66 mm-
SeriesIXFP10N80IXFP10N60-
Transistor Type1 N-Channel1 N-Channel-
TypePolarHV HiPerFET Power MOSFET--
Width4.83 mm4.83 mm-
BrandIXYSIXYS-
Forward Transconductance Min7 S11 S-
Fall Time22 ns21 ns-
Product TypeMOSFETMOSFET-
Rise Time22 ns27 ns-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time62 ns65 ns-
Typical Turn On Delay Time21 ns23 ns-
Unit Weight0.081130 oz0.081130 oz-
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFP10N80P MOSFET 10 Amps 800V 1.1 Rds
IXFP10N60P MOSFET HiPERFET Id10 BVdass600
IXFP10N06P Neu und Original
IXFP10N60P Darlington Transistors MOSFET HiPERFET Id10 BVdass600
IXFP10N80P Darlington Transistors MOSFET 10 Amps 800V 1.1 Rds
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