 |  |  | |
| PartNumber | IXFP130N15X3 | IXFP130N10T | IXFP130N10T2 |
| Description | MOSFET DISCMSFT NCHULTRJNCTX3CLASS | MOSFET 130 Amps 100V | IGBT Transistors MOSFET Trench T2 HiperFET Power MOSFET |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Tradename | HiPerFET | HiPerFET | TrenchT2 HiperFET |
| Packaging | Tube | Tube | Tube |
| Brand | IXYS | IXYS | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Technology | - | Si | Si |
| Mounting Style | - | Through Hole | Through Hole |
| Package / Case | - | TO-220-3 | - |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Id Continuous Drain Current | - | 130 A | - |
| Rds On Drain Source Resistance | - | 9.1 mOhms | - |
| Series | - | IXFP130N10 | IXFP130N10 |
| Unit Weight | - | 0.012346 oz | 0.012346 oz |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 360 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 25 ns |
| Rise Time | - | - | 38 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 130 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4.5 V |
| Rds On Drain Source Resistance | - | - | 9.1 mOhms |
| Typical Turn Off Delay Time | - | - | 24 ns |
| Typical Turn On Delay Time | - | - | 16 ns |
| Qg Gate Charge | - | - | 130 nC |
| Forward Transconductance Min | - | - | 45 S |
| Channel Mode | - | - | Enhancement |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Littelfuse |
IXFP130N15X3 | MOSFET DISCMSFT NCHULTRJNCTX3CLASS | |
| IXFP130N10T | MOSFET 130 Amps 100V | ||
| IXFP130N15X3 | MOSFET N-CH | ||
| IXFP130N10T | MOSFET 130 Amps 100V | ||
| IXFP130N10T2 | IGBT Transistors MOSFET Trench T2 HiperFET Power MOSFET |