IXFR180N0 stock, IXFR180N0, IXFR180N06


PartNumber	IXFR180N06	IXFR180N085	IXFR180N07
Description	MOSFET 180 Amps 60V 0.005 Rds	MOSFET 180 Amps 85V 0.007 Rds	MOSFET 180 Amps 70V 0.006 Rds
Manufacturer	IXYS	IXYS	IXYS
Product Category	MOSFET	Transistors - FETs, MOSFETs - Single	Transistors - FETs, MOSFETs - Single
RoHS	Y	-	-
Technology	Si	Si	Si
Mounting Style	Through Hole	SMD/SMT	SMD/SMT
Package / Case	TO-247-3	-	-
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	60 V	-	-
Id Continuous Drain Current	180 A	-	-
Rds On Drain Source Resistance	5 mOhms	-	-
Vgs Gate Source Voltage	20 V	-	-
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	560 W	-	-
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Tradename	HyperFET	HyperFET	HyperFET
Packaging	Tube	Tube	Tube
Height	21.34 mm	-	-
Length	16.13 mm	-	-
Series	IXFR180N06	IXFR180N085	IXFR180N07
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Width	5.21 mm	-	-
Brand	IXYS	-	-
Fall Time	55 ns	55 ns	55 ns
Product Type	MOSFET	-	-
Rise Time	100 ns	90 ns	90 ns
Factory Pack Quantity	30	-	-
Subcategory	MOSFETs	-	-
Typical Turn Off Delay Time	130 ns	140 ns	140 ns
Typical Turn On Delay Time	63 ns	65 ns	65 ns
Unit Weight	0.056438 oz	0.056438 oz	0.056438 oz
Package Case	-	TO-247-3	TO-247-3
Pd Power Dissipation	-	400 W	400 W
Vgs Gate Source Voltage	-	20 V	20 V
Id Continuous Drain Current	-	180 A	180 A
Vds Drain Source Breakdown Voltage	-	85 V	70 V
Rds On Drain Source Resistance	-	7 mOhms	6 mOhms

Search Part Number : "IXFR180N0", Match & Start with "IXFR180N0" - Total : 4

Hersteller	Teil #	Beschreibung
Littelfuse	IXFR180N06	MOSFET 180 Amps 60V 0.005 Rds
	IXFR180N06	MOSFET 180 Amps 60V 0.005 Rds
	IXFR180N085	MOSFET 180 Amps 85V 0.007 Rds
	IXFR180N07	MOSFET 180 Amps 70V 0.006 Rds

IXFR180N0