IXFR5

IXFR50N50 vs IXFR55N50 vs IXFR52N30Q

 
PartNumberIXFR50N50IXFR55N50IXFR52N30Q
DescriptionMOSFET 43 Amps 500V 0.1 RdsMOSFET 48 Amps 500V 0.08 RdsMOSFET 52 Amps 300V
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V500 V-
Id Continuous Drain Current43 A48 A-
Rds On Drain Source Resistance100 mOhms90 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation400 W400 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHyperFETHyperFET-
PackagingTubeTubeTube
Height21.34 mm21.34 mm-
Length16.13 mm16.13 mm-
SeriesIXFR50N50IXFR55N50IXFR52N30
Transistor Type1 N-Channel1 N-Channel-
Width5.21 mm5.21 mm-
BrandIXYSIXYS-
Fall Time45 ns45 ns-
Product TypeMOSFETMOSFET-
Rise Time60 ns60 ns-
Factory Pack Quantity30600-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time120 ns120 ns-
Typical Turn On Delay Time45 ns45 ns-
Unit Weight0.056438 oz0.056438 oz0.056438 oz
Package Case--TO-247-3
Id Continuous Drain Current--52 A
Vds Drain Source Breakdown Voltage--300 V
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFR58N20 MOSFET HiPerFET Power MOSFETs
IXFR50N50 MOSFET 43 Amps 500V 0.1 Rds
IXFR55N50 MOSFET 48 Amps 500V 0.08 Rds
IXFR55N50F Neu und Original
IXFR50N50 MOSFET 43 Amps 500V 0.1 Rds
IXFR52N30Q MOSFET 52 Amps 300V
IXFR58N20Q MOSFET 50 Amps 200V 0.04 Rds
IXFR55N50 MOSFET 48 Amps 500V 0.08 Rds
IXFR58N20 MOSFET HiPerFET Power MOSFETs
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