PartNumber | IXFR80N10Q | IXFR80N15Q | IXFR80N20Q |
Description | MOSFET 80 Amps 100V 0.018 Rds | MOSFET 75 Amps 150V 0.0225 Rds | MOSFET 80 Amps 200V 0.03 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
Series | IXFR80N10 | IXFR80N15 | IXFR80N20 |
Packaging | Tube | Tube | Tube |
Unit Weight | 0.056438 oz | 0.056438 oz | 0.056438 oz |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package Case | TO-247-3 | TO-247-3 | TO-247-3 |
Technology | Si | Si | Si |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Configuration | Single | Single | Single |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Pd Power Dissipation | 310 W | 310 W | 310 W |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Fall Time | 30 ns | 20 ns | 20 ns |
Rise Time | 70 ns | 55 ns | 50 ns |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Id Continuous Drain Current | 76 A | 75 A | 71 A |
Vds Drain Source Breakdown Voltage | 100 V | 150 V | 200 V |
Rds On Drain Source Resistance | 15 mOhms | 22.5 mOhms | 28 mOhms |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Typical Turn Off Delay Time | 68 ns | 68 ns | 75 ns |
Typical Turn On Delay Time | 30 ns | 30 ns | 26 ns |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | - | HyperFET | HyperFET |