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| PartNumber | IXFT12N100 | IXFT12N100F | IXFT12N100Q |
| Description | MOSFET 12 Amps 1000V 1.05 Rds | MOSFET N-CH 1000V 12A TO268 | MOSFET 12 Amps 1000V |
| Manufacturer | IXYS | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-268-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 1 kV | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 1.05 Ohms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | HyperFET | - | - |
| Packaging | Tube | - | - |
| Height | 5.1 mm | - | - |
| Length | 16.05 mm | - | - |
| Series | IXFT12N100 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 14 mm | - | - |
| Brand | IXYS | - | - |
| Fall Time | 32 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 33 ns | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 62 ns | - | - |
| Typical Turn On Delay Time | 21 ns | - | - |
| Unit Weight | 0.158733 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Littelfuse |
IXFT12N100 | MOSFET 12 Amps 1000V 1.05 Rds | |
| IXFT12N100F | MOSFET N-CH 1000V 12A TO268 | ||
| IXFT12N100QHV | Neu und Original | ||
| IXFT12N50F | Trans MOSFET N-CH Si 500V 12A 3-Pin(2+Tab) TO-268 | ||
| IXFT12N100 | MOSFET 12 Amps 1000V 1.05 Rds | ||
| IXFT12N90Q | MOSFET 12 Amps 900V 0.9 Ohm Rds | ||
| IXFT12N100Q | MOSFET 12 Amps 1000V |