PartNumber | IXFT20N100P | IXFT20N100Q3 | IXFT20N60Q |
Description | MOSFET 20 Amps 1000V 1 Rds | MOSFET 20 Amps 600V 0.35 Rds | |
Manufacturer | IXYS | - | IXYS |
Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-268-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 1 kV | - | - |
Id Continuous Drain Current | 20 A | - | - |
Rds On Drain Source Resistance | 570 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 6.5 V | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 126 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 660 W | - | - |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | HiPerFET | - | HyperFET |
Packaging | Tube | - | Tube |
Height | 5.1 mm | - | - |
Length | 16.05 mm | - | - |
Series | IXFT20N100 | - | IXFT20N60 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Type | Polar Power MOSFET HiPerFET | - | - |
Width | 14 mm | - | - |
Brand | IXYS | - | - |
Forward Transconductance Min | 8 S | - | - |
Fall Time | 45 ns | - | 20 ns |
Product Type | MOSFET | - | - |
Rise Time | 37 ns | - | 20 ns |
Factory Pack Quantity | 30 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 56 ns | - | 45 ns |
Typical Turn On Delay Time | 40 ns | - | 20 ns |
Unit Weight | 0.158733 oz | - | 0.158733 oz |
Package Case | - | - | TO-268-2 |
Pd Power Dissipation | - | - | 300 W |
Vgs Gate Source Voltage | - | - | 30 V |
Id Continuous Drain Current | - | - | 20 A |
Vds Drain Source Breakdown Voltage | - | - | 600 V |
Rds On Drain Source Resistance | - | - | 350 mOhms |