IXFT20

IXFT20N100P vs IXFT20N100Q3 vs IXFT20N60Q

 
PartNumberIXFT20N100PIXFT20N100Q3IXFT20N60Q
DescriptionMOSFET 20 Amps 1000V 1 RdsMOSFET 20 Amps 600V 0.35 Rds
ManufacturerIXYS-IXYS
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-268-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage1 kV--
Id Continuous Drain Current20 A--
Rds On Drain Source Resistance570 mOhms--
Vgs th Gate Source Threshold Voltage6.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge126 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation660 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameHiPerFET-HyperFET
PackagingTube-Tube
Height5.1 mm--
Length16.05 mm--
SeriesIXFT20N100-IXFT20N60
Transistor Type1 N-Channel-1 N-Channel
TypePolar Power MOSFET HiPerFET--
Width14 mm--
BrandIXYS--
Forward Transconductance Min8 S--
Fall Time45 ns-20 ns
Product TypeMOSFET--
Rise Time37 ns-20 ns
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time56 ns-45 ns
Typical Turn On Delay Time40 ns-20 ns
Unit Weight0.158733 oz-0.158733 oz
Package Case--TO-268-2
Pd Power Dissipation--300 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--20 A
Vds Drain Source Breakdown Voltage--600 V
Rds On Drain Source Resistance--350 mOhms
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFT20N80P MOSFET 20 Amps 800V 0.52 Rds
IXFT20N100P MOSFET 20 Amps 1000V 1 Rds
IXFT20N100Q3 Neu und Original
IXFT20N100P Darlington Transistors MOSFET 20 Amps 1000V 1 Rds
IXFT20N80Q MOSFET 20 Amps 800V 0.42 Rds
IXFT20N60Q MOSFET 20 Amps 600V 0.35 Rds
IXFT20N80P IGBT Transistors MOSFET 20 Amps 800V 0.52 Rds
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