IXFT26

IXFT26N100XHV vs IXFT26N50 vs IXFT26N50Q

 
PartNumberIXFT26N100XHVIXFT26N50IXFT26N50Q
DescriptionMOSFET 1000V 26A TO-268HV Power MOSFETMOSFET 26 Amps 500V 0.23 RdsMOSFET 26 Amps 500V 0.2 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-268HV-3TO-268-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage1000 V500 V-
Id Continuous Drain Current8 A26 A-
Rds On Drain Source Resistance320 mOhms200 mOhms-
Vgs th Gate Source Threshold Voltage3.5 V--
Vgs Gate Source Voltage30 V20 V-
Qg Gate Charge113 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation860 W300 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHyperFETHyperFET
PackagingTubeTubeTube
SeriesX-ClassIXFT26N50IXFT26N50
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandIXYSIXYS-
Forward Transconductance Min11 S--
Fall Time8 ns30 ns16 ns
Product TypeMOSFETMOSFET-
Rise Time20 ns33 ns30 ns
Factory Pack Quantity130-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time62 ns65 ns55 ns
Typical Turn On Delay Time29 ns16 ns28 ns
Height-5.1 mm-
Length-16.05 mm-
Width-14 mm-
Unit Weight-0.158733 oz0.158733 oz
Package Case--TO-268-2
Pd Power Dissipation--300 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--26 A
Vds Drain Source Breakdown Voltage--500 V
Rds On Drain Source Resistance--200 mOhms
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFT26N100XHV MOSFET 1000V 26A TO-268HV Power MOSFET
IXFT26N60P MOSFET 600V 26A
IXFT26N50 MOSFET 26 Amps 500V 0.23 Rds
IXFT26N100XHV MOSFET 1000V 26A ULTRA JUNCTION
IXFT26N50Q TR MOSFET N-CH 500V 26A TO268
IXFT26N60Q MOSFET 28 Amps 600V 0.25 Rds
IXFT26N50 MOSFET 26 Amps 500V 0.23 Rds
IXFT26N50Q MOSFET 26 Amps 500V 0.2 Rds
IXFT26N60P MOSFET 600V 26A
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